JPS5846647A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5846647A
JPS5846647A JP14379881A JP14379881A JPS5846647A JP S5846647 A JPS5846647 A JP S5846647A JP 14379881 A JP14379881 A JP 14379881A JP 14379881 A JP14379881 A JP 14379881A JP S5846647 A JPS5846647 A JP S5846647A
Authority
JP
Japan
Prior art keywords
boron
film
impurity
oxide film
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14379881A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0334655B2 (en]
Inventor
Sunao Shibata
直 柴田
Akira Kurosawa
黒沢　景
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14379881A priority Critical patent/JPS5846647A/ja
Priority to US06/384,648 priority patent/US4472874A/en
Priority to DE8282105074T priority patent/DE3279916D1/de
Priority to EP82105074A priority patent/EP0067419B1/en
Priority to CA000404883A priority patent/CA1191280A/en
Publication of JPS5846647A publication Critical patent/JPS5846647A/ja
Publication of JPH0334655B2 publication Critical patent/JPH0334655B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP14379881A 1981-06-10 1981-09-14 半導体装置の製造方法 Granted JPS5846647A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14379881A JPS5846647A (ja) 1981-09-14 1981-09-14 半導体装置の製造方法
US06/384,648 US4472874A (en) 1981-06-10 1982-06-03 Method of forming planar isolation regions having field inversion regions
DE8282105074T DE3279916D1 (en) 1981-06-10 1982-06-09 Method of manufacturing integrated circuit devices using dielectric isolation
EP82105074A EP0067419B1 (en) 1981-06-10 1982-06-09 Method of manufacturing integrated circuit devices using dielectric isolation
CA000404883A CA1191280A (en) 1981-06-10 1982-06-10 Method of forming plunar isolation regions having field inversion regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14379881A JPS5846647A (ja) 1981-09-14 1981-09-14 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP20127490A Division JPH0738409B2 (ja) 1990-07-31 1990-07-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5846647A true JPS5846647A (ja) 1983-03-18
JPH0334655B2 JPH0334655B2 (en]) 1991-05-23

Family

ID=15347222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14379881A Granted JPS5846647A (ja) 1981-06-10 1981-09-14 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5846647A (en])

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5118636A (en) * 1987-11-11 1992-06-02 Seiko Instruments Inc. Process for forming isolation trench in ion-implanted region
US5387540A (en) * 1993-09-30 1995-02-07 Motorola Inc. Method of forming trench isolation structure in an integrated circuit
JP2005093680A (ja) * 2003-09-17 2005-04-07 Oki Electric Ind Co Ltd 半導体装置及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423230A (en) * 1977-07-22 1979-02-21 Mitsubishi Rayon Eng Kk Controlling system of sulfur oxide discharge amount contained in the combustion gas

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423230A (en) * 1977-07-22 1979-02-21 Mitsubishi Rayon Eng Kk Controlling system of sulfur oxide discharge amount contained in the combustion gas

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5118636A (en) * 1987-11-11 1992-06-02 Seiko Instruments Inc. Process for forming isolation trench in ion-implanted region
US5387540A (en) * 1993-09-30 1995-02-07 Motorola Inc. Method of forming trench isolation structure in an integrated circuit
US5436488A (en) * 1993-09-30 1995-07-25 Motorola Inc. Trench isolator structure in an integrated circuit
JP2005093680A (ja) * 2003-09-17 2005-04-07 Oki Electric Ind Co Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH0334655B2 (en]) 1991-05-23

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